Free PDF Download of CBSE Class 12 Physics Chapter 14 Semiconductor Electronics Assertion Reason Questions for Class 12 Physics. Class 12 Physics Assertion Reason Questions with Answers were Prepared Based on the Latest Exam Pattern. Students can solve NCERT Class 12 Physics Semiconductor Electronics to know their preparation level.
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Semiconductor Electronics Class 12 Assertion Reason Questions
The following questions consist of two statements – Assertion (A) and Reason (R). Answer these questions by selecting the appropriate option given below:
(a) Both A and R are true and R is the correct explanation of A.
(b) Both A and R are true but R is not the correct explanation of A.
(c) A is true but R is false.
(d) A is false and R is also false.
Assertion (A) : The conductivity of a semiconductor increases with rise of temperature.
Reason (R) : On rising temperature covalent bonds of semiconductor breaks
(c) A is true but R is false.
Assertion (A) : p-n junction diode can be used even at ultra high frequencies.
Reason (R) : Capacitative reactance of a p-n junction diode increases as frequency increases.
(c) A is true but R is false.
Assertion (A) : The resistance of p-n junction is low when forward biased and is high when reverse biased.
Reason (R) : In reversed biased, the depletion layer is reduced
(c) A is true but R is false.
Assertion (A) : The direction of diffusion current in a junction diode is from n-region to p-region.
Reason (R) :The majority current carriers diffuse from a region of lower concentration to a region of higher concentration
(d) A is false and R is also false.
Assertion (A) : The resistivity of a semiconductor increases with temperature.
Reason (R) : The atoms of a semiconductor vibrate with larger amplitude at higher temperatures thereby increasing its resistivity
(d) A is false and R is also false.
Assertion (A) : The half-wave rectifier work only for positive half cycle of ac.
Reason (R) : In half-wave rectifier only one diode is used.
(a) Both A and R are true and R is the correct explanation of A.
Assertion (A) : The ratio of free electrons to holes in intrinsic semiconductor is greater than one.
Reason (R) : The electrons are lighter particles and holes are heavy particles.
(b) Both A and R are true but R is not the correct explanation of A.
Assertion (A) : In a semiconductor diode, the reverse biased current is due to drift of free electrons and holes.
Reason (R) : The drift of electrons and holes is due to thermal excitations.
(b) Both A and R are true but R is not the correct explanation of A.
Assertion : The diffusion current in a p-n junction is from the p-side to the n-side.
Reason : The diffusion current in a p-n junction is greater than the drift current when the junction is in forward biased.
(b) Both A and R are true but R is not the correct explanation of A.
Assertion : Diode lasers are used as optical sources in optical communication.
Reason : Diode lasers consume less energy.
(c) A is true but R is false.
Assertion (A): In an N-type semiconductor, the majority of carriers are electrons.
Reason (R): N-type semiconductors are doped with pentavalent impurities that provide extra electrons for conduction.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): A p-n junction diode conducts current in the forward bias but not in the reverse bias.
Reason (R): In forward bias, the p-n junction allows the flow of majority carriers, facilitating current flow, while in reverse bias, the depletion region widens, preventing current flow.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): Zener diodes are designed to operate in the breakdown region.
Reason (R): Zener diodes are heavily doped, which results in a narrow depletion region and allows them to operate in the breakdown region.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): Photodiodes are used for detecting light and generating current in response to light.
Reason (R): Photodiodes are semiconductor devices that produce a flow of current when photons of sufficient energy strike the semiconductor junction.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): Transistors are used as amplifiers and switches in electronic circuits.
Reason (R): Transistors can amplify weak signals in amplifiers and act as electronic switches by controlling the flow of current between the collector and emitter.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): In an NPN transistor, the majority carriers in the base region are electrons.
Reason (R): NPN transistors are composed of a p-type base sandwiched between two n-type regions, and the base region is lightly doped, making electrons the majority carriers.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): The input impedance of a common emitter transistor amplifier is relatively high.
Reason (R): The input impedance is determined by the reverse-biased base-emitter junction, which offers high resistance to the input signal.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): The depletion region in a p-n junction diode acts as an insulator.
Reason (R): The depletion region is created by the immobile ions, resulting in the absence of majority carriers and behaving like an insulator.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): In the breakdown region, the current through a p-n junction diode increases significantly.
Reason (R): The breakdown region is characterized by a rapid increase in current due to avalanche or Zener breakdown.
Answer: (a) Both A and R are true and R is the correct explanation of A.
Assertion (A): The barrier potential of a silicon p-n junction is higher than that of a germanium p-n junction.
Reason (R): Silicon has a higher band gap than germanium, resulting in a higher barrier potential at the p-n junction.
Answer: (a) Both A and R are true and R is the correct explanation of A.
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